C3281 transistor datasheet books

Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. Dta124e series pnp 100ma 50v digital transistor bias resistor builtin transistor datasheet loutline parameter value sot723 sot416fl vcc50v icmax. Aug 08, 2016 c83 datasheet vcbo30v, npn transistor panasonic, 2sc83 datasheet, c83 pdf, c83 pinout, c83 manual, c83 schematic, c83 equivalent. It is recommended that transistors not be allowed to operate near these values, lest their lifespan be shortened. Although the software seems a bit ugly design running on dos, but it works perfectly with the database with many components and is free, makes an interesting tool to interested in electronics, want to know when information about a particular component or find a replacement the operation is quite simple and is separated by categories such as. Free packages are available maximum ratings rating symbol value unit collector emitter voltage bc546 bc547 bc548 vceo 65 45 30 vdc collector base voltage bc546 bc547 bc548 vcbo 80 50 30 vdc emitter base voltage vebo 6. According to the datasheet 2n4401 is a general purpose npn switching transistor that features high currents up to bc556, bc557 datasheet p. Jmnic product specification silicon npn power transistors 2sc3281 description with to3pl package complement to type 2sa2 applications power amplifier applications recommended for 100w high fidelity audio frequency amplifier output stage pinning pin description 1 base collector. B absolute maximum ratings parameter symbol ratings unit collectoremitter voltage vceo 400 v collectorbase voltage vcbo 450 v emitterbase voltage vebo 8. I get datasheets from your circuit design determines the output current. The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. Diodes and transistors pdf 28p this note covers the following topics. An npn transistor has the base as the middle p layer, and the emitter and collector as the two n layers sandwiching the base.

These transistors are subdivided into three groups q, r and s according to their dc current gain. Free packages are available maximum ratings rating symbol value unit collector. Factory drop ship smaller orders ship within 5 days in stock. Free device maximum ratings rating symbol value unit collector. Vmt3 emt3f sot416 sot323fl lfeatures 1 builtin biasing resistors, r1 r2 22k. Dtc143tm dtc143teb sc105aa sc89 emt3 umt3f lfeatures 1 builtin biasing resistor. C3281 datasheet, c3281 pdf, c3281 data sheet, datasheet, data sheet, pdf. The complementary pnp transistor to the 2sc3281 is the 2sa2. Hard find electronics ltd is triodes and transistors supplier,short lt of metal can packages transistors,fleld effect transistors,bipolar transistors,voltage regulators triode,multiunits transistors,digital transistor,strong brands. Pnp 100ma 50v digital transistor bias resistor builtin transistor datasheet loutline parameter value sot723 sot416fl vcc50v icmax. If i look at the plot for i c 150ma, and then go to i b 15ma, i see v ce. Irf520p to220 nchannel power mosfet rf final and en369dr companion part. Emy1 umy1n fmy1a datasheet labsolute maximum ratings ta 25c parameter symbol tr1pnp tr2npn unit collectorbase voltage vcbo60 60 v collectoremitter voltage vceo50 50 v emitterbase voltage vebo6 7 v collector current ic150 150 ma power dissipation emy1 umy1n pd1 2 150 mwtotal fmy1a pd1 3 300 mwtotal junction.

Since the distribution of heat in the transistor crystal is not uniform and depends on voltage and. Replacement and equivalent transistor for the 2sc3281. The datasheet states the maximum allowed output current and your design should limit its output current to less. Of course you need the datasheet of the transistor to design a circuit using it. The 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in. Npn general purpose amplifier this device is designed as a general purpose amplifier and switch. However, in figure 4 there is a graph of i b vs v ce. Ldmos rf power field effect transistor 90 w, 869960 mhz. If you are not sure which lead is the collector and which one is the emitter, refer to the package the transistor came in or the specifications on the manufacturers website. Complementary to 2sa2 absolute maximum rating ta25cccc characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation. St 2sc828 828a npn silicon epitaxial planar transistor for switching and af amplifier applications. Bc546b, bc547a, b, c, bc548b, c amplifier transistors npn silicon features pb. Hfe has minimum and maximum values, though both may not be listed.

Pinning pin description 1 emitter 2 base 3 collector, connected to the case fig. For example, in this p2n2222a npn transistor, i can look in the on characteristics table and see that v ce has a max of. Jan 14, 2017 that value of hfe is used for linear transistor operation calculations, where the transistor is not saturated. Sipmos smallsignaltransistor product summary features v. Download ic database equivalent guide 100 thousand. This is the document that the manufacturer provides telling you the typical device performance. The required base current for good saturation is typically 110th or 120th of the collector current forced beta of 10 or 20, as shown in the data sheet where it gives the vcesat voltage. C828 transistor datasheet npn toshiba, c828 transistor, 2sc828 datasheet, pdf, c828 pinouts, data, circuit, ic, manual, substitute, parts, schematic, reference. If a mica insulation is used, the thermal resistance of the mica washer must be added, which amounts to about 0. Directions for determining the thermal resistance rths for cooling fins can be found on page 11. Pnp resistorequipped transistor see simplified outline, symbol and pinning for package details. Dynamic characteristics2 input capacitance c iss 2 176 pf output capacitance c oss 42 56 reverse transfer capacitance c rss 20 30 turnon delay time t don 8 ns rise time t r 28 46 turnoff delay time t doff 21 32 fall time t f 20 30 gate charge characteristics1,2 gate to source charge q gs 0.

Silicon npn triple diffused type power amplifier applications. It should read in the megaohm range for either direction. Fet single discrete semiconductor product 195a 40v 380w through hole. Dtc143t series npn 100ma 50v digital transistors bias resistor builtin transistors datasheet loutline parameter value vmt3 emt3f vceo 50v ic 100ma r1 4. Reverse the probes and measure the resistance again. Reading transistor datasheet for saturation values all. High voltage fastswitching npn power transistor stmicroelectronics. Sometimes the 2s prefix is not marked on the package the 2sc3281 transistor might be marked c3281. Transistors short lt,smd mosfet bipolar power metal can. Preliminary datasheet r07ds0432ej0300 2sc12ak previous.

Your personal data will be used to support your experience throughout this website, to manage access to your account, and for other purposes described in our privacy policy. Transistor specifications explained electronics notes. Mps4126 amplifier transistor pnp silicon features this is a pb. The 2sc3281 transistor might have a current gain anywhere between 55 and 160. According to the datasheet, the typical values are 2v for on. This is the document that the manufacturer provides telling you. Transistor manufacturers issue specification sheets for their transistors which are typically found on the internet, although years ago engineers used to study data books to find out the information.

The breakdown voltage is where the transistor will stop operating or be destroyed if it is given an input voltage of that amount. Absolute maximum ratings t a 25c unless otherwise noted. Here is an image showing the pin diagram of the this transistor. How to read a datasheet prepared for the wims outreach program 5602, d. Diodes,fairchild,inflneon,ir,littelfuse,nec,on,philips,st,toshiba smd diodes. Field effect transistor datasheet, field effect transistor pdf, field effect transistor data sheet, datasheet, data sheet, pdf. Voltage multi epitaxial planar technology for high switching speeds and high voltage capacity. C3281 datasheet, c3281 pdf, c3281 data sheet, c3281 manual, c3281 pdf, c3281, datenblatt, electronics c3281, alldatasheet, free, datasheet, datasheets, data sheet. On special request, these transistors can be manufactured in different pin configurations. R1 is not part of the transistor, its just a typical load to work against for the simulation. Panasonic, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Toshiba power transistor semiconductor data book 1983.

For an npn, the baseemitter behaves as a forwardbiased diode and the basecollector behaves as a reversebiased diode. The datasheet states the maximum allowed output current and your design should limit its. Grover in order to use a pic microcontroller, a flipflop, a photodetector, or practically any electronic device, you need to consult a datasheet. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification.

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